| 摘要 |
The invention relates to a power transistor having emitter cells 3, 4, 5, 6 interconnected together. A conductive base strip 11 is arranged bordering at least one side of the perimeter of the array of emitter cells 3, 4, 5, 6 and the base includes a two-dimensional array of heavily doped strips 7 interposed between the emitter cells and having a zone 8 in contact with the conductive base strip, and the size of the emitter cells 3, 4, 5, 6 increases with the distance separating them from the conductive base strip. <IMAGE>
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