| 摘要 |
PURPOSE:To obtain a fine field effect transistor of super high speed by a method wherein a source.drain region and an insulating film thereunder are formed in the manner of self alignment with a gate electrode, by performing annealing after high concentration oxygen ion is implanted by using the gate electrode as a mask. CONSTITUTION:In the case where a field effect transistor having an insulating film 16 under a source.drain region 17 is manufactured, a mask material 28 is formed on the side wall of a gate electrode 13, after the gate electrode 13 is patterned on a silicon substrate 11, and, by using the gate electrode 13 and the mask material 28 as masks, high concentration oxygen ion is implanted into the substrate 11, in the manner of self alignment with the gate electrode 13. Next, by heat treatment, the substrate region 15 in which the above high concentration oxygen ion is implanted is formed as a silicon oxide film 16; then the mask material 28 is eliminated; a source.drain region 17 is formed by using the gate electrode 13 as a mask. For example, the above ion implantation of high concentration oxygen ion is performed under the condition where acceleration voltage is 400kV and concentration is 1X10<18>cm<-3> or more, and then annealing is performed at 1100 deg.C in a nitrogen atmosphere. |
