| 摘要 |
PURPOSE:To prevent the electrification of a lower layer resist film without using a thin silicon (Si) film by forming resist films having a multilayered structure consisting of thin high-polymer films including a quaternary ammonium salt structure in a part of the main chain or side chain on a substrate, then subjecting the films to an electron beam exposing treatment. CONSTITUTION:The thin high-polymer film 2 contg. the quaternary ammonium salt structure in a part of the main chain or side chain, for example, the thin film of polyvinyl chloride benzyltrimethyl ammonium salt is coated on the surface of an Si substrate 2 and is then subjected to a heat treatment. The Si resist layer 3, for example, a chloromethylated polydiphenyl siloxane layer is coated thereon and is further subjected to a heat treatment, by which the resist films having the two-layered structure are formed. The resist patterns are formed by subjecting the resist films having the multilayered structure to the electron beam exposing treatment. The thin conductive high-polymer films is used for any one layer of the resist films having the multilayered structure is used and, therefore, the electrification of the lower layer resist is prevented without using the thin Si film. |
