发明名称 |
Photoresist pattern fabrication employing chemically amplified metalized material. |
摘要 |
<p>The present invention is directed to a method for the formation and dry development of photoresists treated only in a thin layer (i.e., approx. 2000 Angstroms thick) so as to be treated with an organometallic material. Treatment of this thin layer of the resist formulation in the process of the present invention is preferably accomplished by the vapor phase exposure of the resist formulation to an organometallic material such as a silylating compound capable of reacting with the resist formulation. The resist formulation also contains a photoacid generator, capable of releasing an acid which either causes the hydrolysis of the exposed portions of the resist that were created with organometallic vapor, or prevents the reaction of the organometallic vapor with the exposed portion of the resist.</p> |
申请公布号 |
EP0352739(A2) |
申请公布日期 |
1990.01.31 |
申请号 |
EP19890113699 |
申请日期 |
1989.07.25 |
申请人 |
SHIPLEY COMPANY INC. |
发明人 |
THACKERAY, JAMES W.;FINE, STEPHEN A. |
分类号 |
G03F7/004;G03F7/022;G03F7/075;G03F7/09;G03F7/26;G03F7/38;H01L21/027 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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