发明名称 X-RAY EXPOSURE APPARATUS
摘要 The X-ray exposure appts. has a low attenuation chamber supplied with a gas absorbing X-rays. The low attaenuation chamber being interposed between an X-ray source and a mask so that X-rays transmitted through the low attenuation chamber are irradiated on the mask so as to transfer a mask pattern onto a resist on a wafer. A detector senses a mixed composition of gas in the low attenuation chamber. Another device controls a quantity of supply of the gas into the low attenuation chamber in accordance with an output signal of the detector. A quantity of exposure of the X-ray irradiated on the mask is adjusted in accoradance with an output signal of the detector.
申请公布号 KR900000437(B1) 申请公布日期 1990.01.30
申请号 KR19850007603 申请日期 1985.10.16
申请人 HITACHI LTD. 发明人 KEMBO UKIO;KONEYAMA YOSHIHIRO;IKEDA MINORU;INAKAKI AKIRA
分类号 G03F7/20;H01L21/027;H01L21/30;(IPC1-7):H01L21/30 主分类号 G03F7/20
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