发明名称 |
X-RAY EXPOSURE APPARATUS |
摘要 |
The X-ray exposure appts. has a low attenuation chamber supplied with a gas absorbing X-rays. The low attaenuation chamber being interposed between an X-ray source and a mask so that X-rays transmitted through the low attenuation chamber are irradiated on the mask so as to transfer a mask pattern onto a resist on a wafer. A detector senses a mixed composition of gas in the low attenuation chamber. Another device controls a quantity of supply of the gas into the low attenuation chamber in accordance with an output signal of the detector. A quantity of exposure of the X-ray irradiated on the mask is adjusted in accoradance with an output signal of the detector.
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申请公布号 |
KR900000437(B1) |
申请公布日期 |
1990.01.30 |
申请号 |
KR19850007603 |
申请日期 |
1985.10.16 |
申请人 |
HITACHI LTD. |
发明人 |
KEMBO UKIO;KONEYAMA YOSHIHIRO;IKEDA MINORU;INAKAKI AKIRA |
分类号 |
G03F7/20;H01L21/027;H01L21/30;(IPC1-7):H01L21/30 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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