ATTACHING LEAD OF SEMICONDUCTOR DEVICE

摘要

The semiconductor device with excellent electrical characteristics in high temperature, high humidity conditions includes a bonding wire (23) connecting a bonding pad (24) on the device to a lead electrode (25) on a copper(alloy) lead frame (22), the bonding wire being of aluminium (Al) and the thickness of the reaction layer between the bonding wire and the lead electrode being 0.2 micron or more. The method is claimed in which a fusion connection is effected to make the reaction layer thickness between the copper(alloy) and the aluminium of 0.2 micron or more.