发明名称 THIN FILM TRANSISTOR MATRIX
摘要 <p>PURPOSE:To prevent linear defect from being caused even if a short-circuit defect is generated in a TFT for constituting a thin film transistor matrix and to put an end to a failure of only a picture element corresponding to a defect TFT by interposing an insulating film between a drain electrode of the TFT and a data bus. CONSTITUTION:On an insulating substrate 2, plural pieces of thin film transistors TFT are arrayed like a matrix, and a scanning signal is supplied to a gate electrode G of the TFT from a scan bus line 9 provided in parallel to the line direction of the matrix. Also, from a data bus line 8 provided in parallel to the row direction of the matrix, display data is supplied to a drain electrode D of the TFT. Between the data bus line 8 and the drain electrode D, an insulating film is interposed, therefore, even if the gate and the drain are short- circuited in one TFT, it does not become a short-circuit of the gate electrode G, namely, the scan bus and the data bus 8. Accordingly, although it is inevitable that a picture element which has been connected to a short-circuit defect TFT becomes a display failure, no linear defect is caused.</p>
申请公布号 JPH0227321(A) 申请公布日期 1990.01.30
申请号 JP19880177484 申请日期 1988.07.15
申请人 FUJITSU LTD 发明人 KAWAI SATORU;TAKIZAWA HIDEAKI;INOUE ATSUSHI;ICHIMURA TERUHIKO;NAGAHIRO NORIO
分类号 G02F1/136;G02F1/1343;G02F1/1362;G02F1/1368;H01L27/12;H01L29/78;H01L29/786 主分类号 G02F1/136
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