Lateral bipolar transistor for logic circuit

摘要

A semiconductor integrated circuit device comprises a lateral pnp transistor having a base to which an input signal is applied and a first npn transistor having a base to which a potential appearing at the emitter of the pnp transistor is applied, which transistors constitute a bipolar logic circuit. In the circuit device, the width of the base of the pnp transistor is determined to be in the range of from 5 mu m to 7 mu m.