发明名称 |
HIGH TEMPERATURE INTERCONNECT SYSTEM FOR AN INTEGRATED CIRCUIT |
摘要 |
<p>A semiconductor integrated circuit device is provided with an electrical interconnect system which is stable at high temperatures. The interconnect system employs refractory metal compounds which are electrically conductive, which form stable couples with silicon and compounds thereof, and which remain stable at temperatures exceeding approximately 500.degree.C.</p> |
申请公布号 |
CA1265258(A) |
申请公布日期 |
1990.01.30 |
申请号 |
CA19860504211 |
申请日期 |
1986.03.14 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
THOMAS, MICHAEL |
分类号 |
H01L21/8222;H01L21/28;H01L21/768;H01L23/532;H01L27/06;H01L29/43;(IPC1-7):H01L23/52 |
主分类号 |
H01L21/8222 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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