| 摘要 |
<p>PURPOSE:To form efficiently a bump of stable quality by a method wherein the upper surface of a bump type electrode is flattened by applying a plating to the base part of the electrode. CONSTITUTION:An integrated circuit is formed and a barrier film 4 consisting of Cr or the like and a conducting film 5 for plating use consisting of Cu or the like are formed on an IC wafer 1 formed with an Al electrode 2 and a passivation film 3. Then, a resist 6 of a configuration smaller than that of a pad electrode is formed. Then, a base metal layer 7 is formed by plating. Then, the resist 6 is peeled and resists 8 of the configuration of the pad electrode are formed. Then, a bump plating to correspond to the amount of the thickness of a bump is applied and a bump plated layer 9 is provided. Then, the resists 8 are peeled to obtain a bump type electrode.</p> |
