发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To realize a large capacity condenser by forming a condenser section with a first electrode connected to a transistor, a second electrode disposed oppositely to the first electrode through a dielectric film, and a third electrode disposed oppositely to the second electrode through a dielectric film and connected to the first electrode. CONSTITUTION:In stacked memory cells, a second electrode 11 being a plate electrode as a common electrode among the memory cells includes first and third electrodes 8, 18 disposed on both sides thereof oppositely to each other through first and second dielectric films 10, 14. Accordingly, two capacitances are connected parallel to the second electrode 11. This assures that electric charges are stored not only on the one side of the second electrode but on both sides of the same. For this, capacity of the condenser section is increased. Thus, a larger capacity condenser section can be formed in the memory cells of limited areas.
申请公布号 JPH0223657(A) 申请公布日期 1990.01.25
申请号 JP19880174090 申请日期 1988.07.12
申请人 SHARP CORP 发明人 IGUCHI KATSUJI;URAI MASAHIKO;KAWAMURA AKIO;SHIGA CHIYAKO;KOBA MASAYOSHI
分类号 H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 主分类号 H01L27/04
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