PHOTOELECTRIC CONVERTING APPARATUS

摘要

The converter includes a nitrogenous silicn layer (3) of 100-1000A in thickness formed on a transparant layer (1) having a conduction layer (2), a hydrated non-crystallic silicon layer (4) doped with boron of 2-10 SCCM for photoelectric conversion, and a sulfurated antimon layer comprising a fine layer (5) formed in the Argon circumstances of 1x10-4- 1x10-3 Torr and a porous layer (6).