| 摘要 |
An ultrafine copper alloy wire, comprising (a) a base material composed essentially of an oxygen-free copper containing not higher than 1.0 ppm in total of at least one member selected from the group consisting of S, Se and Te and balance copper, and (b) at least one alloy element selected from the group consisting of Si, Al, Cr, Fe, Mn, Ni, P, Sn and Zn in a total amount in the range of 1.0 to 500 ppm, and a semiconductor device comprising a bonding wire made of the ultrafine copper alloy wire. |
