发明名称 ALUMINIUM NITRIDE SUBSTRATE
摘要 There is disclosed an aluminum nitride substrate which comprises a substrate composed of an aluminum nitride sintered product; an electroconductive metallized layer composed of titanium nitride and at least one selected from the group consisting of molybdenum, tungsten, tantalum, an element in group III of the periodic table, an element in group IVa of the same, a rare earth element, an actinide element and a compound containing these elements; and an electroconductive protective layer laminated in this order on the aluminum nitride sintered product.
申请公布号 GB2187205(B) 申请公布日期 1990.01.24
申请号 GB19870003742 申请日期 1987.02.18
申请人 * KABUSHIKI KAISHA TOSHIBA 发明人 HIDEKI * SATO;NOBUYUKI * MIZUNOYA;MITSUHIRO * NAGATA
分类号 C04B41/90;C04B41/52;C04B41/89;C23C18/54;C23C28/00;C23C30/00;H05K1/09;H05K3/38 主分类号 C04B41/90
代理机构 代理人
主权项
地址