| 摘要 |
PURPOSE:To treat a resist for ashing in non-oxidizing atmosphere, by a method wherein nascent hydrogen or hydrogen atom is used when a resist coated on a substance to be treated is processed for ashing. CONSTITUTION:Chromium film 12 of 1,000Angstrom in thickness is deposited by evaporation on quartz substrate 11, and PMMA resist 13 of 1mum in thickness is deposited thereon. Pattern is drawn using an electron beam drawing apparatus. The specimen is immersed in isoamyl alcohol and a resist 13 is developed thereby pattern is formed. The specimen is disposed in a plasma etching apparatus of parallel plate type and selective etching of the chromium film 12 is performed. The plasma etching apparatus is evacuated, and then H2 gas is introduced therein and the resist 13 is removed. |
