| 摘要 |
PURPOSE:To improve reverse dielectric resistance between the base and collector of a drive-stage element by forming an impurity region so as to face to the extending section of a mesa groove in the base length of a drive stage. CONSTITUTION:A P type base layer 31 as the bases on the drive-stage element and an output element is formed onto an N type collector layer 30. The N type emitter layer 32 of the drive stage and the N type emitter layer 33 of an output stage at a predetermined interval from the layer 32 are formed to the base layer 31. The mesa groove 34 reaching the collector layer 30 is formed so as to surround a region in which these emitter layers 32, 33 are shaped. The mesa groove 34 has the extending section 34a. The N type impurity region 35 is formed into the base layer 31 of the drive stage so as to face to the extending section 34a and at a predetermined interval from the layer 32. A protective film 36 is formed into the groove 34. A base electrode 37 is formed into the prescribed region of the layer 31 and an emitter elecgrode 38 onto the layer 32. An output- stage emitter electrode 39 is shaped onto the layer 33. |
