| 摘要 |
<p>PURPOSE:To obtain a semiconductor device for high frequency by molding a semiconductor pellet and an inner lead to a resin mold package and setting the resin thickness of the package and a distance between the surface on the mounting substrate side of the pellet and a mounting surface to a mounting substrate at specific values. CONSTITUTION:In the example of a GaAs Schottky diode, inner leads 1a, a semiconductor pellet 2 and a bonding wire 3 are molded and sealed into a package 4 composed of an epoxy resin, etc. In the constitution, the thickness l1 of the package 4 is brought to 0.7mm or less. A distance between the surface on the mounting substrate 5 side of the pellet 2 and the mounting surface of a substrate 5, the height l2 of the pellet, is brought to 0.2mm or less. Accordingly, parasitic capacitance and parasitic reactance are reduced, and substantially the same high-frequency characteristics as a ceramic package is acquired.</p> |
