| 摘要 |
PURPOSE:To form a CdTe film in a P-type, to simultaneously reduce the contact resistance of the CdTe film with a carbon paste film, and to improve and stabilize the characteristics of a photovoltaic element by simultaneously adding CuO and Te into carbon paste, and baking the coated paste at a temperature near the melting point of the Te. CONSTITUTION:Flux is added to CdS powder to form CdS paste, which is printed on a glass board 1, dried and baked to form a baked CdS film 2. Then, flux is added to the CdTe powder to form CdTe paste, which is screen printed on the baked CdS film. After the printed film is dried, it is baked in an inert gas atmosphere to obtain a baked CdTe film 3. The thus obtained CdTe film is screen printed with high purity carbon paste containing the Te powder and small amount of CuO, dried, and baked near at the melting point in an inert atmosphere. Eventually, the film 2 ad the film 4 are screen printed with AgIn paste to form an AgIn electrode 5. |
