| 摘要 |
PURPOSE: To enhance the resolution of a pattern and to form a pattern of submicron size even on an uneven face by forming a specified site on a resist and depositing a photodissociated atom thereon. CONSTITUTION: A film 14 by chemical vapor deposition, etc., and a resist layer 20 are formed on a substrate 12, then the substrate is introduced into a pressure chamber 22, and the monolayer 32 of a photosensitive gas such as W(CO)6 is adhered onto the layer 20. Subsequently, the substrate is placed in a photoimaging system 34, the layer 32 is irradiated with a desired light (e.g. a light of about 193nm) through the cuttings 38 and 40 to photodissosicate the layer 32 of the exposure part, and the nucleus forming sites 46 and 48 of W, etc., are formed. The substrate is then introduced into an exposure device 50, the photosensitive gas of W(CO)6 , etc., introduced form an injection port 54 is photodissociated with a beam 65 to deposit W, etc., on the sites 46 and 48, and protective covers 66 and 68 are formed. The layer 20 and film 14 are then etched in this order. |
