| 摘要 |
PURPOSE:To decrease fluctuation in electric power and reduce cost by a method wherein thickness of an active layer is in a specific relation to diffusion length of minor carriers in the active layer at the time of shutdown of a satellite. CONSTITUTION:Thickness tn of an N-GaAs layer satisfied a relation of tnapprox.=Lphi where Lphi refers to diffusion length of hole elements that are minor carriers in the N-GaAs layer at the time of shutdown of a satellite. The relation expressed by the indicated equation is established between diffusion length Lphi and the initial value Lo of minor carriers. In the equation, KL refers to a damage factor and phi refers to exposure dosage. Since this relation is established, diffusion length Lphi can be calculated by calculating the initial value Lo if the satellite service life is determined and the exposure dosage up to its shutdown is known. Thus can decrease fluctuation in electric power and reduce cost. |
