| 摘要 |
<p>PURPOSE:To perform excellent positioning by forming a 1st pattern for forming an internal area which is closed in plane on one flat surface of a substrate and a 2nd pattern which occupies the internal area surrounded with the 1st pattern. CONSTITUTION:The 1st pattern 14 for forming the internal area 12 which is closed in plane is formed on one flat surface 10a of the substrate 10 by photolithography technique with high pattern machining accuracy. Then a partial pattern 16 which is a size smaller than the internal area 12 is formed of a liquid pattern material in the internal area 12 surrounded with the 1st pattern 14. Then the partial pattern 16 is leveled to bring its peripheral edge part into contact with the internal flank of the 1st pattern 14. Consequently, the 2nd high-accuracy pattern 16' which has the flat surface and has its size controlled by the 1st pattern is obtained.</p> |
