| 摘要 |
<p>PURPOSE: To protect mutual contamination of a substrate and a conducting layer by interposing three sets of barrier layers between the silicon substrate and the conducting layer. CONSTITUTION: In order to protect from especially copper contamination, and in order to protect a conducting layer 17 from silicon contamination which reduces preferable conductivity, three sets of barrier layers 5, 9, 13 are formed on the surface of a silicon substrate before the conducting layer 17 is formed. Concretely, at first, at least 2000Åthick silica layer 5 is formed on the silicon substrate 3, then at least one Group IV heavy metal layer 9 is stuck to the silica layer 5. Two layers 5, 9 are heated in no existence of reactive atmosphere at a temperature at which oxygen is moved, oxygen is moved from the silica layer 5 to the Group IV heavy metal layer 9, and a Group IV heavy metal silicide 13 is formed. The silicon substrate 3 and the conducting layer 17 are protected from mutual contamination.</p> |
