| 摘要 |
PURPOSE:To effectively clean the surface of solid silicon by irradiating the surface of solid silicon regulated to ground potential with the ions of rare gas generated from an electron cyclotron resonance cavity impressed with positive potential in a vacuum vessel introduced with rare gas. CONSTITUTION:Solid silicon 4 which has been contaminated by SiO2, surface segregation of the impurities and organic substance, etc., and has a form of single crystal, polycrystal and amorphous substance is arranged in a vacuum vessel 14 and rare gas such as He, Ar and Ne is introduced into the vacuum vessel 14. A magnetic field is generated with a magnet 10 provided to the outer periphery of an electron cyclotron resonance(ECR) cavity 9 which is partitioned from the vacuum vessel 14 by an insulating ring 3 and microwave is introduced into the cavity 9 through a waveguide 8 from a microwave power source 7 and the cavity 9 is impressed with bias voltage by a DC power source 12 and also solid silicon 4 is regulated to ground potential. The surface thereof is irradiated by the ion beam 11 of rare gas to remove oxide, the impurities and organic substance, etc., on the surface of solid silicon 4 and thereby this surface thereof is effectively cleaned. |
