| 摘要 |
PURPOSE:To make the distribution of energy absorbed by an electron beam resist film uniform along the direction of the resist film thickness by a method wherein, before an electron beam is selectively applied to the electron beam resist film, or before a development treatment after the electron beam is applied, a photoelectric material film is formed on the electron beam resist film and ultraviolet rays are applied to the whole surface. CONSTITUTION:An electron beam resist film 2 and a cesium iodide (CsI) film 3 are formed on the surface of a substrate 1. If ultraviolet rays are applied to the film surface, electrons are emitted from CsI, which is photoelectric material, and injected into the electron beam resist film. The energy of the electron is absorbed by the resist and its intensity distribution is such that the energy is high near the surface ad joining the CsI film and, the farther the distance from the Cal film, the lower the energy. If an electron beam is applied, the energy distribution given to the resist of the part to which the electron beam is applied is the synthesized distribution and nearly a vertical energy distribution can be obtained. If the resist is developed, a resist pattern almost free from scum can be obtained. It is to be noted that the ultraviolet rays may be applied after the electron beam application and before the development treatment. |
