发明名称 |
A METHOD OF MANUFACTURING LATERAL INSULATED-GATE FIELD-EFFECT TRANSISTORS |
摘要 |
A method of manufacturing a semiconductor device such as a lateral insulated gate field effect transistor is described in which impurities for forming first and second relatively shallow RESURF regions (8 and 11) of the opposite and the one conductivity type, respectively, are then introduced into the first region (4) and the semiconductor body is then heated first in an oxidising atmosphere to cause the impurities to diffuse to form the RESURF regions (8 and 11) and to grow a relatively thick layer of insulating material on the given surface (3) at the same time. The relatively thick layer of insulating material is then defined to provide field oxide (14a) and gate oxide (14) then grown onto which is deposited a conductive gate layer (15,16) to form an insulated gate structure. Impurities are then introduced into the semiconductor body (3) using the insulated gate structure as a mask so as to form a lateral insulated gate field effect transistor (1). |
申请公布号 |
EP0304096(A3) |
申请公布日期 |
1990.01.10 |
申请号 |
EP19880201137 |
申请日期 |
1988.06.06 |
申请人 |
PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES LIMITED;N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
FISHER, CAROLE ANNE;PAXMAN, DAVID HENRY;COE, DAVID JAMES |
分类号 |
H01L21/336;H01L29/06;H01L29/08;H01L29/10;H01L29/739;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|