发明名称 PRESSURE CONNECTION TYPE SEMICONDUCTOR DEVICE
摘要 <p>According to the present invention, one surface of a temperature compensator (2) is arranged to face the surface of a first electrode (1c) which is formed on one surface of a semiconductor element(1) while one surface of a first external electrode (3) is arranged to face the other surface (2b) of the temperature compensator (2). A second external electrode (14) is arranged in a space region which is defined by a through hole (2a) of the temperature compensator (2) and a cavity (3a) of the first external electrode (3), to face the surface of a second electrode (1b). An insulator (13) is interposed between the outer side surface of the second external electrode (14) and the inner side surfaces of the cavity (3a) and the through hole (2a) so that the second external electrode (14) is located in prescribed positional relation to the first external electrode (3) and the temperature compensator (2). Thus, there is no possibility that any misregistration is caused between the temperature compensator (2), the first external electrode (3), the second external electrode (14) and the insulator (13), whereby the temperature compensator (2) and the second electrode (1b) can be correctly and easily aligned with the first electrode (1c) and the second external electrode (14), respectively.</p>
申请公布号 EP0324929(A3) 申请公布日期 1990.01.10
申请号 EP19880119894 申请日期 1988.11.29
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TOKUNOH, FUTOSHI
分类号 H01L29/74;H01L21/52;H01L23/051;H01L23/48;(IPC1-7):H01L23/34;H01L23/04 主分类号 H01L29/74
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