| 摘要 |
PURPOSE:To grow a single crystal with reduced crystal defects in the manufacture of a single crystal by a pulling method, by setting a crucible so that the center of the crucible is positioned under the center of heating. CONSTITUTION:A crucible 1 for melting a starting material is set so that the center of the crucible 1 is positioned under the central horizontal level of a high frequency coil 4 placed at the outside of the crucible 1 by a distance corresponding to 1-10% of the diameter of the crucible 1. Thus, the upper half of the crucible 1 is heated to produce a tendency to inhibit natural convection, so the crystal defects of a pulled single crystal such as cracking are reduced. |
