发明名称 THIN FILM TRANSISTOR
摘要 <p>PURPOSE:To shorten the time required for back exposure by equalizing the product of the film thickness and refractive index of a protection film nearly to an integer multiple of the half wavelength of light used for the exposure of a position matching method. CONSTITUTION:The film thickness (d) of the protection film 5 is set (m/2) times the effective wavelength (lambda/n) of light used for the exposure of a resist film formed on the protection film 5 in the protection film. Here, (m) is an integer. The effective wavelength of the incident light 7 in the film is equal to an integer multiple of the optical path difference 2d of transmitted light 8 incident on the resist film 6 and the transmitted light 8 is in phase, so no interference is caused and the intensity of the transmitted light beam 8 is maximized. Consequently, the exposure time in the back exposure is shortened.</p>
申请公布号 JPH025022(A) 申请公布日期 1990.01.09
申请号 JP19880157437 申请日期 1988.06.24
申请人 FUJITSU LTD 发明人 MATSUMOTO TOMOTAKA;KAWAI SATORU;NASU YASUHIRO
分类号 G02F1/1333;G02F1/136;G02F1/1368;G09G3/36;H01L21/336;H01L29/786 主分类号 G02F1/1333
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