发明名称 NON-VOLATILE MEMORY CIRCUIT DEVICE
摘要 PURPOSE:To decrease a consumption current and to improve the power source margin of a sense amplifier by impressing a potential, which is lower than a power source potential, to the gate of a transistor for column selection and precharging a node, for which the sense amplifier is connected, to the power source potential. CONSTITUTION:An intermediate potential generating circuit 8 generates a constant potential VDD which is lower than a power source voltage VCC and higher than a ground potential VSS and supplies it to a column decoder 9. The decoder 9 selectively supplies the potential VDD to the gate of a transistor 2 for column selection based on a column address. A sense amplifier 10 to be composed of NOR gate circuits 11 and 12 is connected to a node A. When a reading signal is 'H', a transistor 1 for precharge is turned on and the node A is precharged up to the potential VCC. Thus, since the circuit 8 only drives the gate of the transistor 2, the consumption current is decreased and the power source margin of the sense amplifier 10 is improved.
申请公布号 JPH023191(A) 申请公布日期 1990.01.08
申请号 JP19890049401 申请日期 1989.03.01
申请人 TOSHIBA CORP 发明人 ITO MAKOTO;KITAGAWA NOBUTAKA
分类号 G11C17/00;G11C16/06 主分类号 G11C17/00
代理机构 代理人
主权项
地址