| 摘要 |
PURPOSE:To reduce unnecessary alignment mark regions, to enable forming circuit patterns highly efficiently, and to improve the utilization efficiency of a wafer by forming alignment marks and the circuit patterns separately on the wafer. CONSTITUTION:Alignment marks 12 and circuit patterns 13 are separately formed on a wafer 11. For example, at first, specified alignment marks 12 are formed at specified regions on the wafer 11 using an electron beam or ion beam exposing machine. Then, the wafer 11 is exposed with a step-and- repeat photolithographic system with demagnification, adjusting their positions using the alignment marks 12. At this time, as only the circuit patterns are inserted into the mask and the alignment marks are not inserted, all the circuit patterns 13 formed in the exposed region are for product purposes. By doing this, more chips can be obtained from a sheet of wafer as any unnecessary alignment mark is not formed on the wafer. |
