发明名称 CORRECTING METHOD FOR MASK PATTERN
摘要 PURPOSE:To remove a suspended chromium film from on a protection film entirely without forming any step at the absence part of a mask by forming the protection film which is not peeled off in a lift-off process between a substrate and resist by coating. CONSTITUTION:The protection film 7 and photoresist film 5 are adhered in order on a substrate 2 where a light shielding film pattern 1 is formed while covering the light shielding film pattern 1, the photoresist film 5 on a pinhole 5 is exposed in a spot, and development is carried out to form an opening on the pinhole 3. The photoresist is used as the mask to etch the protection film 7 on the pinhole 3 and a light shielding film 6 for correction is adhered over the entire surface of the substrate 2 while covering the opening; and the photoresist film 5 and light shielding film 6 for correction are lifted off and removed, then the protection film 7 is peeled off, and the light shielding film 6P for correction is adhered in the pinhole 3. Consequently, when the white defect of the mask is corrected, such a secondary defect that the residues of the light shielding film 6 used for the correction stick on the absent part of the light shielding film pattern 1 is prevented from occurring.
申请公布号 JPH022558(A) 申请公布日期 1990.01.08
申请号 JP19880148664 申请日期 1988.06.16
申请人 FUJITSU LTD 发明人 USUJIMA AKIHIRO
分类号 G03F1/72;H01L21/027;H01L21/30 主分类号 G03F1/72
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