| 摘要 |
PURPOSE:To reduce high density dislocation produced between a substrate and a heat treated layer and to improve exchanging efficiency of a solar battery by using a heat treated layer using a first compound semiconductor, a first alternate layer, an intermediate layer which uses the first compound semiconductor and a buffer layer which is a combination of a second alternate layer. CONSTITUTION:A heat treated layer 3 consisting of GaAs located on an Si substrate 2, a first alternate layer 4 made by a repetition structure of an InGaAs layer 4.2 and a GaAs layer 4.1 which are formed on the heat treated layer 3, an intermediate layer 5 consisting of GaAs formed on the first alternate layer, a second alternate layer 6 made by a repetition structure of at least two cycles of an AlGaAs layer and a GaAs layer formed on the intermediate layer 5, and a solar battery active layer 7 formed on the second alternate layer are provided. High density dislocation produced at an interface of the Si substrate and GaAs is reduced by a combination of the heat treated layer 3 and the first alternate layer 4. This effect is increased by using the GaAs intermediate layer 5 and further reduction of dislocation can be realized. |
