| 发明名称 |
EPROM cell utilising a trench insulation and its method of manufacture |
| 摘要 |
The present invention proposes a highly reliable EPROM cell utilising a trench insulation and its method of manufacture. This new EPROM cell includes a control gate 11 constituted from a strongly doped n-type silicon, and a floating gate 13 constituted from a single poly-I layer. <IMAGE>
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| 申请公布号 |
FR2633777(A1) |
申请公布日期 |
1990.01.05 |
| 申请号 |
FR19890008469 |
申请日期 |
1989.06.26 |
| 申请人 |
GOLDSTAR SEMICONDUCTOR LTD |
发明人 |
SANGSOO LEE |
| 分类号 |
H01L21/8247;H01L21/28;H01L21/336;H01L21/76;H01L27/10;H01L27/115;H01L29/06;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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