发明名称 |
A method of manufacturing a semiconductor device. |
摘要 |
<p>Spaced-apart regions (2) each having top (2a) and side walls (2b) meeting at an edge (20) are defined on a surface (1a) of a substructure (1) forming part of the device. A layer (3) of insulating material is provided over the said surface (1a) and regions (2), so that the insulating material is provided preferentially at the said edges (20) of the regions (2) to form adjacent the said edges (20) portions (31) of the insulating material which overhang the underlying insulating material (32) provided on the said surface (1a). The insulating material layer (3) is then etched anisotropically to expose the top walls (2a). During the anisotropic etching the overhanging portions (31) initially mask the underlying insulating material provided on the said surface (1a) so that the etching of the underlying insulating material is controlled by the etching away of the overhanging portions (31) and when the top walls (2a) are exposed relatively gently sloping spacers or portions (30) of the insulating material remain on the side walls (2b). A further insulating material layer (4) may then be provided over the structure.</p> |
申请公布号 |
EP0349070(A2) |
申请公布日期 |
1990.01.03 |
申请号 |
EP19890201658 |
申请日期 |
1989.06.23 |
申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
BELLERSEN, MICHAEL FRIEDRICH BRUNO;GOOTZEN, WILHELMUS FRANCISCUS MARIE;VAN LAARHOVEN, JOSEPHUS MARTIN FRANCISCUS GERARDUS;DOAN, TRUNG TRI |
分类号 |
H01L21/302;H01L21/3065;H01L21/3205;H01L21/3213;H01L21/768;H01L23/52 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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