| 摘要 |
A charge-coupled device comprises a body of semiconductor material having a channel along which charge can be transferred in a predetermined transfer direction by charge carriers of a first polarity, and a plurality of gates over the channel, the gates being in n sets, where n is an integer greater than unity. The gates of the jth set, where j is in the range of 1 to n, are longer in the transfer direction than the gates of the kth set, which precede the gates of the jth set. The kth set of gates are driven between first and second potential levels of which the first potential level is of the first polarity relative to said second potential level, and the jth set of gates are driven between third and fourth potential levels of which the third potential level is of the first polarity relative to the fourth potential level and is of a second polarity relative to the first potential level.
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