| 摘要 |
<p>A semiconductor device comprises a substrate including a p-type first semiconductor region (10), an n-type second semiconductor region (11) formed in the first semiconductor region (10), a first insulating layer (13) formed on surfaces of the first semiconductor region (10) and the second semiconductor region (11), a first conductive layer (14) formed, via the first insulating layer (13), over the surface of the second semiconductor region (11), and set at substantially the same potential as that of the second semiconductor region (11), and n-type third semiconductor region (12) formed to be spaced apart from the second semiconductor region (11) and formed in the first semiconductor region (10) so that a part of the third semiconductor region (12) overlaps a part of the first conductive layer (14), via the first insulating layer (13), a second conductive layer (15) connected to the third semiconductor region (12) through an opening (16) formed in the first insulating layer (13), and a wiring layer (18) formed on a second insulating layer (17) provided on surfaces of the first and second conductive layers (14 and 15).</p> |
