Static MESFET random access memory cell.

摘要

A static random access memory cell (30) implemented with metal Schottky field-effect transistors. The cell has first and second branches (32,32'), each of the branches including: a depletion mode current limiting transistor (34) having a drain connected to a first circuit node (D); a depletion mode load transistor (36) having a drain connected to the source of the current limiting transistor (34) and a source connected to a second circuit node (E); an enhancement mode active transistor (38) having a drain connected to the second circuit node (E) and a source connected to a third circuit node (F); an enhancement mode access transistor (40) having a source connected to the second circuit node (E) and a gate connected to the gate of the current limiting transistor (34); the gate of the load transistor (36) connected to the second circuit node (E); the commonly connected gates of the current limiting transistor (34) and the access transistor (40) adapted to receive a word-line signal (WL); and the drain of the access transistor (40) adapted to receive a bit-line signal (BL).