| 摘要 |
PURPOSE:To enhance photosensitivity and surface potential and to reduce residual potential by forming an amorphous silicon carbide photoconductive layer having 2 layer structure composed of the first layer region containing a specified amount of specified element and the second layer region containing a specified amount of specified element in a specified composition. CONSTITUTION:The amorphous silicon carbide photoconductive layer having the 2 layer structure forming a photosensitive layer on a conductive substrate together with an organic photosemiconductor layer is composed of a first layer region containing an element of group Va of the periodic table in an amount of 0-5,000ppm and at least one of O and N in an amount of 0.01-30 atomic %, and a second layer region which has an atomic composition represented by the formula of (Si1-xCx)1-yAy, where A expresses H or halogen, and x and y are as follows; 0<x<0.5, and 0.2<y<0.5, and contains an element of group IIIa of the periodic table in an amount of 1-300ppm, thus permitting the obtained electrophotographic sensitive body to be enhanced in photosensitivity and surface potential and low in residual potential. |
