发明名称 Semiconductor device having memory with ECL gate array.
摘要 <p>A semiconductor device in a single chip comprises a memory (20) having a plurality of memory cells, and an emitter coupled logic gate array (21) for carrying out a predetermined logic operation on a data output from one of the memory cells of the memory and for outputting an output signal having a first amplitude. The memory includes a circuit (251-254) for outputting as the data output a positive phase signal (+DO) and a negative phase signal (-DO) respectively having a second amplitude smaller than the first amplitude.</p>
申请公布号 EP0347333(A2) 申请公布日期 1989.12.20
申请号 EP19890401716 申请日期 1989.06.16
申请人 FUJITSU LIMITED;FUJITSU VLSI LIMITED 发明人 KIMOTO, MASAYOSHI;KOHNO, KAZUYUKI
分类号 G11C11/41;G11C11/416;H03K19/086 主分类号 G11C11/41
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