| 摘要 |
PURPOSE:To enable to obtain a low dislocation crystal under a low temperature grade when the compound semiconductor single crystal containing a volatile component element is to be made to grow and to be fostered according to the liquid capsule sealing fusion lifting method by a method wherein the thickness of a liquid capsule sealing material to be used is made as the same or more of the length of the crystal to be grown. CONSTITUTION:Because the capsule sealing material B2O3 layer 11 can be made sufficiently thick, and moreover the temperature of B2O3 can be set voluntarily according to an upper heater 15, temperature distribution at the neighborhood of the boundary between the melting liquid 2 and B2O3 is mitigated, and moreover because the single crystal 10 is in B2O3 held at a fixed temperature when the crystal is lifted, and abrupt cooling can be avoided, thermal distortion to enter in the crystal is reduced extremely. |
