| 发明名称 |
Process for producing beta -form Si3N4 +B |
| 摘要 |
Disclosed is a process for producing beta -form Si3N4 comprising firing amorphous or alpha -form Si3N4 of high chemical purity in a non-oxidizing atmosphere under an elevated pressure at a temperature of at least about 1600 DEG C., as well as a process for producing an article comprising such beta -form Si3N4.
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| 申请公布号 |
US4888142(A) |
申请公布日期 |
1989.12.19 |
| 申请号 |
US19870139109 |
申请日期 |
1987.12.22 |
| 申请人 |
TOSHIBA CERAMICS CO., LTD. |
发明人 |
HAYASHI, KENROU;OGUMA, REIJI;TAMURA, MASAYUKI |
| 分类号 |
C01B21/068;C04B35/593;C23C16/34;C30B15/10;C30B35/00 |
主分类号 |
C01B21/068 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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