MANUFACTURE OF SEMICONDUCTOR

摘要

PURPOSE: To eliminate an arbitrary crystal disturbance essentially without losing accuracy by joining a semiconductor to a carrier permanently using a support with a sufficient thickness and then reducing the thickness of the semiconductor. CONSTITUTION: A carrier 2 has parallel main surfaces and is joined to a support 1 with a thickness of at least 1/8 of the maximum dimension of the carrier 2 tentatively and is ground mechanically with a flatness of at least 1/2μm. After a semiconductor 4 is permanently joined to the main surface of the carrier 2 via the main surface, the semiconductor 4 is ground mechanically to a thickness that is thicker than a desired final thickness by 50μm or longer. Then, the semiconductor 4 is alternately ground mechanically and tribochemically to a thickness that is thicker than the final desired layer thickness by at least 10μm. Further, a tribochemical grinding state is performed up to a desired layer thickness of the semiconductor to obtain a desired semiconductor, thus preventing an arbitrary crystal disturbance generated below the semiconductor surface from damaging the functions of the carrier and hence avoiding warpage.