| 摘要 |
The high-capacity reactor for deposition from vapour phase by chemical reaction, pref. for making silicon epitaxias, consists of a group of graphite susceptors in a compact block, heated by an electric current through the susceptors, which are interconnected to form an electrical resistance. The reactant gases are introduced into the individual reaction ducts at chambers between the susceptors, over which the wafers of crystalline material, usually silicon, on which the epitaxia is to be formed are supported in almost vertical position. The reactor assembly is enclosed in a stainless steel chamber, gilded or aluminised internally, which is maintained at a low temp. by suitable cooling.
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