Polycrystalline silicon.

摘要

Polycrystalline silicon rod capable of providing within no more than two floating zoning passes, unicrystalline silicon exhibiting a resistivity of at least 10,000 ohm-cm (donor) and a lifetime of at least about 10,000 milliseconds, exhibits a copper X-ray diffraction pattern having a peak at 26.85+/-0.25 DEG (2 THETA ) and has less than 15 ppta boron and less than 20 ppta phosphorus.