Method for manufacturing a semiconductive resistor.

摘要

After doping a conductive layer made of a semiconductive material with impurites, a conductive layer with a deep trap level is formed by low temperature annealing. For forming such a conductive layer with a deep level, lattice defects are introduced into a conventional conductive layer through ion implantation and after that, only stable lattice defects, that can work as deep levels , remain by annealing at low temperature.