| 摘要 |
PURPOSE:To obtain the title superconductor through CVD process with enhanced film formation rate and improved productivity, by making one of plural raw materials into a ligand-contg. metal complex gas to enhance the vapor pressure of the raw material. CONSTITUTION:A vaporized ligand (e.g. hexafluoroacetylacetone) is put into each of containers 11, 12, 13, while plural kinds of raw materials (e.g. Ba compound, Y compound, Cu compound) are put into respective containers 1, 2, 3. Thence, the ligand in the containers 11, 12, 13 is transferred through a carrier gas (e.g. Ar) to the respective containers 1, 2, 3 followed by heating using respective heaters 8 to convert the raw materials in the containers 1, 2, 3 into ligand- contg. metal complex gases, respectively, which are then introduced into a reaction chamber 5. Simultaneously, oxygen 10 is also introduced into said chamber 5 followed by heating the resultant mixed gas using a heater 8 to cause chemical reaction, thus forming the objective filmy superconductor on a substrate 9. |
