STRUKTUR AUS FELDEFFEKT-TRANSISTOR UND PIXELELEKTRODE ZUR VERWENDUNG IN FLUESSIGKRISTALLANZEIGEN UND VERFAHREN ZUR HERSTELLUNG DER STRUKTUR

摘要

In order to dielectrically and chemically isolate gate electrodes (12) and pixel electrodes (20) in large area, flat panel liquid crystal matrix addressed display devices, these two distinct electrodes are disposed in a non-coplanar arrangement. A layer (14) of silicon nitride is disposed over gate electrodes (12) and simultaneously supports transparent pixel electrodes (30) in different layers so as to provide the desired degree of isolation. Undoped amorphous silicon (16) and doped amorphous silicon (17) regions form source and drain regions, one of which is connected via electrode (22b) to a pixel electrode (20). <IMAGE>