| 摘要 |
<p>A memory cell arranged to operate during normal operation as a static random access memory for storing bit data and provided with self back-up during interruption of power comprises a first inverter (5, 7) and a second inverter (2, 6) coupled together to form a flip-flop effective for storing bit data. The first inverter comprises a memory element (7) switchable between a normal transistor function and a non-volatile memory function. The memory element is selectively controlled during normal operation to provide the normal transistor function for enabling the flip-flop to serve as the static random access memory, immediately before interruption of power to receive the stored bit data to reserve the same in non-volatile state, and to restore the reserved bit data in the flip-flop serving as the static random access memory when power is recovered.</p> |
