METHOD AND MATERIALS FOR ETCHING SILICON DIOXIDE USING SILICON NITRIDE OR SILICON RICH DIOXIDE AS AN ETCH BARRIER,申请号EP19870106471-传众专利搜索

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发明名称	METHOD AND MATERIALS FOR ETCHING SILICON DIOXIDE USING SILICON NITRIDE OR SILICON RICH DIOXIDE AS AN ETCH BARRIER
摘要
申请公布号	EP0265584(A3)	申请公布日期	1989.12.06
申请号	EP19870106471	申请日期	1987.05.05
申请人	INTERNATIONAL BUSINESS MACHINES CORPORATION	发明人	BENNETT, REID STUART;CHAO, HU HERBERT;SACKLES, PAUL EDWARD
分类号	H01L21/302;H01L21/3065;H01L21/311;(IPC1-7):H01L21/31	主分类号	H01L21/302
代理机构		代理人
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