| 摘要 |
PURPOSE:To reduce a fissure and a crack inferiority of a wafer, by making use of a matter, whose stitch gap of knitting made of a carbon fiber is soaked with resin, as a carrier for a precision polish processing, such as a crystal wafer. CONSTITUTION:A carrier 1 for a precision polish processing is formed by cutting a matter whose knitting gap 13 knitted by woof 11 and warp 12 made of a carbon fiber system is soaked with resin, such as epoxy resin for securing. Precision polish processing, such as lapping is done by a conventional method by sticking a thin fragile material, such as a crystal wafer which is a processing material on the carrier 1. |
